ss8050 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ss8050 rev. b3 1 july 2010 ss8050 npn epitaxial silicon transistor features ? 2w output amplifier of portable radios in class b push-pull operation. ? complimentary to ss8550 ? collector current: i c =1.5a ? collector power dissipation: p c =2w (t c =25 c) absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 6 v i c collector current 1.5 a p c collector power dissipation 1 w t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter conditions min. typ. max. units bv cbo collector-base breakdown voltage i c =100 a, i e =0 40 v bv ceo collector-emitter breakdown voltage i c =2ma, i b =0 25 v bv ebo emitter-base breakdown voltage i e =100 a, i c =0 6 v i cbo collector cut-off current v cb =35v, i e =0 100 na i ebo emitter cut-off current v eb =6v, i c =0 100 na h fe1 h fe2 h fe3 dc current gain v ce =1v, i c =5ma v ce =1v, i c =100ma v ce =1v, i c =800ma 45 85 40 300 v ce (sat) collector-emitter saturation voltage i c =800ma, i b =80ma 0.5 v v be (sat) base-emitter saturation voltage i c =800ma, i b =80ma 1.2 v v be (on) base-emitter on voltage v ce =1v, i c =10ma 1 v c ob output capacitance v cb =10v, i e =0, f=1mhz 9.0 pf f t current gain bandwidth product v ce =10v, i c =50ma 100 mhz classification b c d h fe2 85 ~ 160 120 ~ 200 160 ~ 300 1. emitter 2. base 3. collector to-92 1
ss8050 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ss8050 rev. b3 2 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product 0 0.4 0.8 1.2 1.6 2.0 0.1 0.2 0.3 0.4 0.5 i b = 3.0ma i b = 2.5ma i b = 2.0ma i b = 1.5ma i b = 1.0ma i b = 0.5ma i c [a], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 1000 1 10 100 1000 v ce = 1v h fe , dc current gain i c [ma], collector current 0.1 1 10 100 1000 10 100 1000 10000 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 v ce = 1v i c [ma], collector current v be [v], base-emitter voltage 110100 1 10 100 1000 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 1 10 100 400 1 10 100 1000 v ce = 10v f t [mhz], current gain bandwidth product i c [ma], collector current
ss8050 ? npn epitaxial silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ss8050 rev. b3 3 physical dimensions 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92 dimensions in millimeters
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